Abstract
A method is developed for the discrimination of the diffuse scattering absorption coefficient μDS from the experimental interference absorption coefficient (IAC) μie by the investigation of the dynamical scattering of X-rays for wavelengths near the K absorption edges of Ga and As in GaAs crystals heavily doped with Te. Conclusions are made about the appearance of dislocation loops after the Te solid solution decay comparing the IAC increments ratios measured at different hkl reflections for Cuα and CuKβ radiations and those values calculated by means of formulae obtained from Dederichs's theory for μDS. The conclusions of this theory are experimentally proved with the dependences of μDS on the wavelength λ and diffraction vector H. [Russian Text Ignored].
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