Dynamical resonant charge transfer of fast C−, O−, F− ions and water covered Si(111) surface

Abstract

The experiment of 6.5–22.5 keV C−, O− and F− ions scattering on water covered Si(111) surface has been performed. It is found that the positive-ion fraction is very low and increases monotonically as a function of perpendicular exit velocity and exit angle. In particular, the negative-ion fraction increases monotonically with perpendicular exit velocity for specular scattering, and for a given incident energy the angle dependence of the fraction is nonmonotonic. We interpret the observed positive ions in terms of inelastic binary collision, and adopt a modified resonant charge transfer model to calculate the bell-shaped negative-ion fraction. We find that the neutral yield at short ion-surface distance is nonzero and obeys well an exponential dependence. It strongly indicates that a dynamical equilibrium for negative ion formation is never achieved at short distances, and the band gap effect on charge transfer can be neglected to a large extent in this relatively high energy region.