Dynamical properties of total intensity fluctuation spectrum in two-mode Nd:YVO4 microchip laser**Project supported by the Beijing Higher Education Young Elite Teacher Project, China (Grant No. YETP0086), the Tsinghua University Initiative Scientific Research Programme, China (Grant No. 2012Z02166), and the Special-funded Programme on National Key Scientific Instruments and Equipment Development of China (Grant No. 2011YQ04013603).

Abstract

We investigate the total intensity fluctuation spectrum of the two-longitudinal- mode Nd:YVO4 microchip laser (ML). We find that low-frequency relaxation oscillation (RO) peaks still appear in the total intensity fluctuation spectrum, which is different from a previous research result that the low-frequency RO peaks exist in the spectrum of the individual mode but compensate for each other totally in the total intensity fluctuation spectrum. Taking the spatial hole-burning effect into account, one and two-mode rate equations for Nd:YVO4 ML laser are established and studied. Based on the theoretical model, we find that when the gains and losses for two longitudinal models are different, a low-frequency RO peak will appear in the total intensity fluctuation spectrum, while when they share the same gain and loss, the total spectrum will behave like that of a single mode laser. Theoretical simulation results coincide with experimental results very well.