Dynamical process of KrF pulsed excimer laser crystallization of ultrathin amorphous silicon films to form Si nano-dots

Abstract

Molecular dynamics (MD) simulations based on the Tersoff potential have been developed to study the laser-induced crystallization of amorphous silicon (a-Si) film with ultrathin thickness to form size-controllable Si nano-dots. The influences of laser fluence and a-Si film thickness on the crystallization process were discussed. Classic nucleation theory was used to explain the results of the MD simulations. The constrain effect of a-Si films thickness on the formation of Si nano-dots was evaluated accordingly.