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Abstract
Results of a study of thickness oscillations (Pendellosung beats) of the X-ray integrated intensity for the symmetrical Laue case of silicon dislocation single crystals are presented over the temperature range from 100 to 295 K. The oscillation period is found to increase with the dislocation density and the reflection order. It is shown that the Debye temperature θM can be precisely determined by the temperature shift of the oscillation patterns for dislocation crystals. The value of θM, obtained from the temperature dependence of Pendellosung intensity beats for a real crystal agrees well with that for a perfect one. [Russian Text Ignored].
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