Abstract

A dynamical thermal model of optical GaAs FET's (OPFET) is presented in this paper. Based on physical behaviour of OPFET's, we constructed a nonlinear thermal model for the built-in potential and using it we modeled the threshold voltage and source, drain and channel resistances. Based on these models and known temperature models for mobility and carrier velocity, a complete model for transfer and output characteristics is described. Based on this model, we simulated OPFET characteristics in the cased of turning the light on and off.

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