Abstract
When an electron gas is subjected simultaneously to quantizing magnetic fields and intense laser fields in Faraday geometry, the electron density of states and the fundamental absorption edge will be shifted by an energy Eem=(eF0)2/[4m∗(ω2−ωc2)], where ω and F0 are, respectively, the frequency and the electric field strength of the laser field and ωc is the cyclotron frequency. This is known as dynamical Franz-Keldysh effect (DFKE). In this paper, we study theoretically the DFKE for a semiconductor-based electron gas system in the presence of quantizing magnetic fields and of intense terahertz (THz) laser fields.
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