Abstract
Dynamical faceting during homoepitaxial growth of GaAs on nanoscale-patterned surfaces by molecular beam epitaxy is examined. Selective deposition on open GaAs(1 0 0) surfaces with lateral dimensions ranging from 130 to 250 nm, separated by 15–80 nm-wide (25-nm-thick) SiO 2 stripes aligned along the [0 1 ̄ 1] direction results in facet formation and lateral growth over the SiO 2 mask. At the early stage of growth, (3 1 1) facets appear on sidewalls near the boundary between an open GaAs surface and SiO 2 mask, these are replaced by (1 1 1) facets starting from SiO 2 boundaries as growth continues. After complete replacement, growth proceeds laterally in the direction perpendicular to [0 1 ̄ 1] retaining the (1 1 1) facets until coalescence occurs between adjacent triangular cross-sectioned GaAs stripes. Nanoscale fabrication nonuniformity results in dynamical formation and retention of multiple (3 1 1) facets even for growth thicknesses much greater than the thickness of the SiO 2 mask stripes. This dynamical faceting is interpreted by minimization of total surface free energy based on equilibrium crystal shape, in qualitative agreement with our experimental results.
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