Abstract
Considering the development of faster power electronic switches, especially silicon carbide (SiC) devices, parasitic elements, such as stray inductances and capacitances, become more and more crucial. Overvoltages caused by stray inductances in combination with fast switching transients can destroy the devices at turn-off. In this paper the implementation of the DVRC circuit for silicon carbide bipolar junction transistors (BJTs) is investigated. The DUT was Fairchild`s FSICBH057A120 (VCES = 1200 V, Ron = 57 mΩ).
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