Abstract
The non-stationary thermoelectric model of the axisymmetric heterostructure of a light-emitting device is considered taking into account positive feedback mechanisms and the effect of the current-spreading-layer resistance. Taking into account the current localization effect, the nonuniform distribution of the heterojunction current density over the heterostructure area is determined. The non-stationary thermal conductivity equation with temperature-dependent current density flowing into the heterojunction is solved by the numerical–analytical iterative method. Based on the developed model, the current density, temperature, and thermomechanical stress distributions for the heterojunction plane are determined.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
