Abstract
Theoretical calculations have been performed to obtain information on the dynamic thermoelasticity in photomasks during pulsed exposure due to a KrF excimer laser stepper. A dynamic model based on lumped heat capacity and in-plane stress systems has been proposed. The calculations were performed at an 8 µ J/cm2 energy density with pulse duration of 15 ns. It was found that the displacement caused by thermal expansion takes place at a 10 µ s time lapse after pulsed exposure, while there is no influence on the printed feature shift. Since the resonance frequency of 7.14 kHz is higher than the practical pulse repetition frequency of 200∼800 Hz, the photomasks cannot receive thermal damage due to the resonance. Therefore, excimer laser lithography based on pulsed exposure will be a useful method for fabricating sub-half-micron LSI devices.
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