Dynamic Single-Electron Transistor Modeling for High-Frequency Capacitance Characterization

Abstract

Based on the time-dependent master equation and taking the dynamic gate current into account, a new single-electron transistor (SET) model is proposed, which can represent intrinsic terminal capacitances and transcapacitances. By using this model, bias, frequency and temperature dependences of these capacitances are evaluated. Since the model is implemented in the SPICE circuit simulator, it can be used to analyze the high-frequency behavior of circuits, including SETs and is applied to the characterization of a SET-based inverting amplifier this time.