Year-end Sale % OFF 
Abstract
Numerical results from a dynamic simulation of impurity transport and reactions in a Bridgman furnace for directional solidification of multi-crystalline silicon are presented and compared to experimental results. The simulation includes the calculation of the thermal field, melt and gas flow velocity field, transport and chemical reactions of oxygen and carbon impurities for the entire process based on heating, melting and solidification phases. Carbon and oxygen distribution in the ingot is analyzed experimentally by means of FT-IR spectroscopy and LECO combustion method, the CO development by means of an μ-GC gas analyzer.The simulated impurity distribution in the ingot and the CO development above the free melt surface are in good agreement with the experimental results. Furthermore the results indicate that the carbon solubility limit is already reached at the stage of melting and SiC precipitates are likely to form at the early stage of growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
