Dynamic-sasamal: simulation software for high-dose ion implantation

Abstract

A computer code, ‘Simulation of Atom Scattering in Amorphous MAterials based on Liquid model (dynamic-SASAMAL)’ has been developed to simulate the dose dependence of composition profile and sputtering yield of a non-crystalline target under ion implantation, which uses the binary collision model. Among many kinds of binary collision programs, the program TRIM and its derivatives have spread widely. In addition, there are some TRIM derivatives that can treat the dose dependence, i.e. TRIDYN and EVOLVE. However, these dynamic programs are not so obtainable as TRIM. Authors have studied many dose-dependent phenomena under ion implantation by the dynamic-SASAMAL code. Recently, we made the code easy to operate. At first, by using the periodic table, we are requested to input the atomic number of the implanted ion species and the target structure, the number of layers, and the maximum dose and the dose step. After the first calculation, if we need to continue the calculation by changing the energy or the ion species, we can. During the calculation, the depth profiles of atomic composition, vacancies and interstitial atoms, and the angle dependence of number and energy of sputtered atoms are shown on the display. We can set the concentration limit for a high-dose implantation of a reactive ion to a metal, such as 50% for N implantation to Ti. The outline of the software is presented together with the dose-dependent phenomena, which have been studied by using the dynamic-SASAMAL.