Abstract
Dynamic ON resistance of GaN devices is a must-care point for users. In this paper, the reverse conduction of commercial GaN power transistors is studied. Even though the commercial HEMTs show stable performance in normal operation modes (off-to-on), significant dynamic ON resistance can be seen in some particular conditions. A test method is set up to evaluate dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> in a reverse-to-on mode. The conditions to activate the behavior are discussed, and the cause of dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> is possibly due to traps located in the gate region. Meanwhile, a wireless power transfer system operating at 6.78MHz is used to study the effect of reverse conduction mode on dynamic resistance at the circuit level. According to the change of the operation frequency, we find that the influence of reverse conduction on the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> effect is not only affected by the value of reverse conduction voltage but also related to the operating mode of the device.
Highlights
GaN HEMT is emerging as a promising candidate for nextgeneration power switching applications [1]
We studied the influence of reverse conduction on the dynamic Ron effect of commercial GaN devices
A class-D zerovoltage-switching (ZVS) magnetic resonance wireless power transfer (WPT) system with an LC resonant tank is built using GaN HEMT to observe the influence of reverse conduction mode on the dynamic Ron of the device on the circuit level
Summary
GaN HEMT is emerging as a promising candidate for nextgeneration power switching applications [1]. One of the reasons that cause reliability problems in GaN devices is the dynamic ON-resistance (Ron) effect [4]. Dynamic Ron characteristics, the fact that GaN HEMT Ron does not remain constant, has attracted much attention It will seriously limit the output power and efficiency of the device [5]. We studied the influence of reverse conduction on the dynamic Ron effect of commercial GaN devices. We built a special test circuit that makes the device operate in a reverse-to-on mode to study the dynamic Ron effect on the device level. A class-D zerovoltage-switching (ZVS) magnetic resonance WPT system with an LC resonant tank is built using GaN HEMT to observe the influence of reverse conduction mode on the dynamic Ron of the device on the circuit level. A limited number of pulses are transmitted to the gate to reduce the impact of selfheat effect
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