Abstract
This study investigates the impact of gate field plate (G‐FP) lengths on the dynamic on‐resistance degradation in partially recessed‐gate D‐mode GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs). Devices with G‐FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G‐FPs effectively reduce electron trapping and suppress the dynamic on‐resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN‐based MIS‐HEMTs.
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