Dynamic recrystallization in CuP and CuGe single crystals

Abstract

The dynamic recrystallization behavior of CuP (containing 0.1, 0.5 or 1.0 wt.%P) and CuGe (containing 0.5, 4.0 or 9.0 wt.% Ge) single crystals was investigated at a deformation temperature of 850°C. With increasing solute concentration the dynamic recrystallization kinetics slow down, growth selection rapidly decreases, especially for the CuP system, and multiple twinning proceeds to high orders. The recrystallization stress apparently decreases with increasing solute concentration but behaves reasonably when normalized with the appropriate shear modulus, compared at the homologous temperature, and under the assumption that the stacking fault energy decreases with increasing solute content.