Abstract
ABSTRACTGallium nitride single crystals were irradiated using energetic Au2+ ions to two fluences at room temperature. Two different damage levels and depth profiles that are characterized by near-surface damage accumulation and deeper-region damage saturation were produced. Thermal annealing at 873 K resulted in disorder recovery only in the near-surface region at low fluence. However, simultaneous irradiation with 5.4 MeV Si2+ ions during annealing at 873 K induced significant recovery over the entire damage profile at both low and high fluences. Results from high-resolution transmission electron microscopy show recovery of the crystal structure in the highly disordered surface region following the Si2+ ion irradiation. The irradiation-assisted recovery is primarily attributed to defect-stimulated recovery and epitaxial recrystallization processes due to the creation of mobile Frenkel pairs.
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