Abstract

This paper describes a comprehensive nonlinear multiphysics model based on the Euler–Bernoulli equation that remains valid up to large displacements in the case of electrostatically actuated nanocantilevers. This purely analytical model takes into account the fringing field effects which are significant for thin resonators. Analytical simulations show very good agreement with experimental electrical measurements of silicon nanodevices using wafer-scale nanostencil lithography (nSL), monolithically integrated with CMOS circuits. Close-form expressions of the critical amplitude are provided in order to compare the dynamic ranges of NEMS cantilevers and doubly clamped beams. This model allows designers to cancel out nonlinearities by tuning some design parameters and thus gives the possibility of driving the cantilever beyond its critical amplitude. Consequently, the sensor performance can be enhanced by being optimally driven at very large amplitude, while maintaining linear behavior.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.