Abstract
Porous silicon samples have been prepared from p-type single-crystal silicon 〈100〉 by a galvanostatic and an open-circuit etch in 50% HF. The materials display bright red-orange room-temperature photoluminescence (PL) in air and toluene solution. Infrared measurements show that the porous silicon surface is partially oxidized. Exposure to anthracene (An) or 10-methylphenothiazine (MPTZ) results in dynamic quenching of the material's excited state(s). Nanosecond time-resolved PL decays are complex and wavelength dependent, with average lifetimes in neat toluene of 0.3−16 μs. Quenching by An and MPTZ is more efficient and rapid at short observation wavelengths. The steady-state and time-resolved quenching data are well fit to the Stern−Volmer model. The PL decays are well described by a skewed distribution of recombination rates.
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