Abstract
A capacitance transient study is performed on the n-type GaAs anodic MOS system, in order to clarify the dynamic properties of the interface states near midgap. A simple theory of capacitance transient and DLTS including the effect of time constant spread due to tunneling from the interfacial traps, is developed. Good agreements are obtained between the theory and experiment of capacitance transient, and between the transient analysis and the steady-state admittance analysis. The striking conclusion is that the states at midgap possess an activation energy of 0.38 eV. This is against the standard theory of surface-state continuum, and is explained by the interface-state-band (ISB) model in terms of partial formation of ’’band region’’ by interface states. The model resolves the previous question of anomalously large effective capture cross section of 10−8 cm2, giving a normal constant value of 1.5–2.9×10−15 cm2.
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