Abstract
AbstractPlastic/ductile inorganic van der Waals (vdW) thermoelectric semiconductors offer transformative advantages for high‐performance flexible thermoelectric devices, which can displace the self‐charge system of wearable electronics. However, the chemical origin of their plasticity remains unclear. Here, it is reported that the exceptionally large plastic strain of the bulk SnSe2 crystal results from its polytype conversion under an external force. The SnSe2 single crystal consists of a large‐period polytype with 18R low‐symmetry structure rather than the trigonal and hexagonal‐phase that are frequently observed in the polycrystalline specimen. In situ applied pressure to the specimen drives a phase transition from low to high‐symmetry, that is, from 18R to 4H, and finally to 2H‐SnSe2. First principle calculations corroborate that the dynamic phase transition is a pressure‐activated process and only 15 MPa pressure erases their energy gaps, consistent with experimentally measured strain–stress curves. This dynamic phase transition results in superior and near isotropic plasticity along the direction parallel and perpendicular to the cleavage plane.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
