Dynamic oxidation of SiC with arc-heated plasma wind tunnel and laser heating

Abstract

For the investigation of thermal protection system (TPS) for re-entry vehicles, arc-heated plasma wind tunnel was developed to simulate re-entry conditions. The surface temperatures of the samples were independently controlled of the plasma flow by installing a laser heating system. By using this system, first attempt of the dynamic oxidation of SiC was conducted. SiC sample surface was heated up to 2200 K and was exposed to high-speed atomic oxygen (O) flow during oxidation for 100–600 s. From the obtained results, active/passive transition border of SiC was suggested: 1700–1800 K at 100–1000 Pa area of oxygen partial pressure. Obtained A/P transition border is considered close to the actual re-entry condition wherein the oxidation occurs in the condition of highly dissociated and slightly ionized oxygen gas flow simulating the re-entry conditions.