Abstract

We present a proposal of a partial reconfiguration architecture for optically reconfigurable gate arrays and present an 11,424 gate dynamic optically reconfigurable gate array VLSI chip that was fabricated on a 96.04 mm(2) chip using an 0.35 μm three-metal complementary metal oxide semiconductor process technology. The fabricated VLSI chip achieved a 2.21 μs partial reconfiguration.

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