Abstract

Nowadays, state-of-the-art for optical data storage (ODS) have emerged as a leader in the competition of data storage technologies. However, the development of optical storage technology based on optically stimulated luminescence (OSL) encounter the serious problems, of single storage mode and easily decoding. In this study, a series of Ba2SiO4 (denoted as BS): Eu2+, Ln3+ (Ln = Dy, Ho) phosphors with adjustable trap distributions (trap depths of 0.6–0.8 eV) have been developed by high-temperature solid-phase method and exhibit intense green emission peak located at 504 nm under excitation of 360 nm. Typically, BS: 0.02Eu2+, 0.02Ho3+ phosphor owns a shallow trap depth of 0.696 eV and BS: 0.02Eu2+, 0.02Dy3+ phosphor shows a deep trap depth of 0.81 eV. Interestingly, the flexible optical information storage film prepared by BS: 0.02Eu2+, 0.02Ho3+ phosphor through spin-coating technique can storage the “National Water Conservation Logo” pattern under NUV irradiation and reappear even after more than 60 days at 75 °C. Subsequently, multimodal anti-counterfeiting strategy is proposed by BS: Eu2+, Ln3+ (Ln = Dy, Ho) phosphors with adjustable trap depths and the flexible information coding device with high transmittance has been developed, in which encrypted message of “HELLO” and “86068” can be recognized at 75 °C and 130 °C, respectively. This work not only lays the foundation for realizing the durability of optical information storage, but also provides high security with multiple levels of retrievability.

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