Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor

Abstract

In this study, we investigated the process-dependent dynamic on-resistance [RDS(on)] characteristics of recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistors with a SiO2 gate oxide. In order to improve the dynamic RDS(on) characteristics, the processing technology was carefully optimized, including post-metallization annealing and field plate formation. A threshold voltage of 2.0 V was achieved with a breakdown voltage of 1070 V. The fabricated device exhibited a DC RDS(on) of 5.22 mΩ·cm2 with very stable dynamic RDS(on) characteristics, i.e., a less than 20% increase up to the drain voltage of 200 V.