Abstract
Step movement on the Si(111)7 × 7 surface at 750°C was observed in situ by high-resolution reflection electron microscopy which resolved superlattice fringes with a spacing of 2.3 nm. Oxygen gas was used to desorb the Si atoms from the surface, so that the steps moved largely even at 750°C. A step moved by units of the 7 × 7 superlattice, and the step edge always terminated at the same position of the 7 × 7 unit cell, that is, the dimer chain of the dimer adatom stacking-fault model of the Si(111)7 × 7 structure.
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