Abstract
Indium adsorption and desorption processes on Si(111) surfaces were observed in situ by UHV high-temperature STM. By the deposition of In on the Si(111)7 × 7 surfaces at 380°C, the surface structure changed successively to 3 × 3 , 31 × 31 and 4 × 1. The number densities of silicon atoms in the restructuring layers for the 3 × 3 , 31 × 31 , and 4 × 1 structures were evaluated to be about 0, 1 and 2 ML, respectively. High-resolution STM images were also taken after the deposition.
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