Abstract
An improved technique is presented here for modelling the dynamic, large-signal properties of microwave devices such as GaAs MESFETs. The method is based on repeated harmonic balance analysis of a simple nonlinear circuit. Many of the sources of inconsistency in established modelling methods have been avoided, making more reliable circuit analysis possible.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have