Abstract
A discrete three-dimensional model has been developed for the computer simulation of multistage processes involved in the formation of a porous space in semiconductor crystals anodized in a reactive medium. A related program package is created that provides the dynamic simulation of cluster formation in depth of a semiconductor crystal with allowance for the processes taking place on the surface, chemical reactions accompanying these processes, and applied external fields. The maximum fractal dimension of structures obtained using this algorithm within the framework of the proposed model is 2.68.
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