Abstract
A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
