Abstract
Mesh generation for TCAD modeling is challenging. Because densities of carriers can change by several orders of magnitude in thin areas, a significant change of the solution can be observed for two very similar meshes. The mesh must be defined at best to minimize this change. To address this issue, a criterion based on polynomial interpolation on adjacent nodes is proposed that adjusts accurately the mesh to the gradients of Degrees of Freedom. Furthermore, a dynamic mesh that follows changes of DF in DC and transient mode is a powerful tool for TCAD users. But, in transient modeling, adding nodes to a mesh induces oscillations in the solution that appears as spikes at the current collected at the contacts. This paper proposes two schemes that solve this problem. Examples show that using these techniques, the dynamic mesh generator of the TCAD tool ECORCE handle semiconductors devices in DC and transient mode.
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