Abstract
Reported are the temperature-dependent photoluminescence (PL) results of molecular-beam epitaxy-grown gallium-doped zinc selenide (ZnSe:Ga) sample with the sample temperature varied from 10 to 300 K. The physical origins of a twin PL structure peaked at 2.794 and 2.733 eV, respectively, that overwhelm the whole PL spectrum are discussed, and the dynamic processes behind these temperature-dependent PL results are also investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
