Abstract
Bismuth vanadate (BiVO4) is an important semiconductor with wide applications, but in-depth understanding of its fundamental dynamic behaviors is still lacking. To address this issue, the comprehensive analysis of structure, internal friction (IF), modulus, dielectric, and impedance spectra was employed to unambiguously disclose the dynamic mechanical and electric behaviors for a series of Bi1–xLaxVO4 ceramics (0 ≤ x ≤ 0.15). In sensitive mechanical measurement, five IF peaks, corresponding modulus anomalies and high-temperature creep behavior, have been observed in our Bi1–xLaxVO4 ceramics. Through analyzing their related kinetic parameters, defect formations and evolution processes, the complex evolution model of ferroelastic domains including four different stages, and the origin of grain boundary relaxation are well established. As for the electric experiment, there are two apparently different activation processes in low and high temperature regions, respectively. In conjunction with structural and m...
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