Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors

Abstract

Single-electron transistors (SETs) with an electrically formed Coulomb island are proposed and fabricated on the basis of the sidewall patterning on the recessed channel structure. The fabricated device is based on a silicon-on-insulator (SOI) wafer. The quantum dot (QD) is caused by the electrically induced tunneling barriers with n-doped polycrystalline silicon (poly-Si) sidewall gates on the active surface. These devices with side gates are more advantageous in terms of the room-temperature operation and controllability of oscillation peaks for application circuits. This is because the dimensions of the Coulomb island and oscillation peak are modified by the side gate bias. The side gate dependence of the fabricated SET with a recessed channel structure is characterized through a device simulator.