Abstract
The metal-insulator-semiconductor structures were produced on silicon substrates by combination of planar technologies: Langmuir-Blodgett technique and polyion layer-by-layer self-assembly method. Thin organic films, consist of monomolecular layer of calix[4]arenes and macromolecular layer of polyion, was an insulator. Electro physical properties of these structures were investigated by dynamic current-voltage characteristic method. The effect peculiarity of LB films deposition and LB film thickness and kind of metal ions on the shape of I-V curves at different frequencies of applied voltage has been established.
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