Abstract
We have studied the chemical interaction of the surface of undoped and doped ZnSe crystals with H2O2-HBr-H2O bromine-releasing solutions. The dissolution rate of the semiconductor materials has been measured as a function of etchant composition, stirring rate, temperature, and doping. The composition region of polishing solutions has been mapped out, and the surface condition after chemical etching has been examined by microstructural analysis. We have proposed and optimized polishing etchant compositions and conditions for chemical polishing of the semiconductors.
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