Abstract
The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5×1020 cm−3 is investigated using the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation generation increases with B concentration, which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentration.
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