Dynamic characteristics of 4H-SiC drift step recovery diodes

Abstract

The dynamic characteristics of 4H-SiC p+–p–n0–n+ diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.