Dynamic behavior of negative charge trapping in thin silicon oxide

Abstract

The trapping of negative charges in thin oxide under bipolar and unipolar dynamic stressing is compared. Bipolar stressing causes significantly less trapping than unipolar stressing. The difference is attributed to the enhanced electron detrapping during the bipolar stress. This detrapping mechanism is strongly dependent on the amount of charge injected through the oxide and, for a fixed amount of injected charge, is a weak function of the stressing current density.