Abstract
Charge trapping and intrinsic breakdown characteristics of ultra-thin reoxidized-nitride with deep-trench capacitor structures for a range of voltages and temperatures were investigated. Strong polarity dependence of time-dependent-dielectric-breakdown (TDDB) was found. A physical model is proposed for the first time to relate the asymmetric charge injection and trapping to this intrinsic breakdown characteristics in thin reoxidized-nitrides.
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