Abstract
Scanning electrochemical microscopy (SECM) feedback mode has been used to investigate kinetics of dye regeneration in DSSC. Organic dye C343 and CW1 are used as sensitizers for nickel oxide (NiO) photoelectrochemical cells. The influence of film thickness on dye regeneration kinetics in the films for NiO/C343 for six different films was investigated. SECM was used to analyze effective rate constant, keff and reduction rate kred, absorption cross section, Φhv for the dye regeneration process. The data reveal a significant variation of keff and kred with a variation of light intensity, sample thickness and dye difference. This research found remarkable dependence of the dye regeneration kinetic parameters on illumination flux, dye types and film thickness of electrode.
Highlights
Dye-sensitized solar cells (DSSC) have got much attention due to low production cost, flexibility and transparency relative to other solar cells [1] [2] [3]
Scanning electrochemical microscopy (SECM) feedback mod based on an ultra microelectrode (UME) to substrate and subsequent its current response as a function of the distance from the surface provide dye regeneration kinetics in sensitized solar cells [19] [38] [39] [40] [41]
In order to scrutinize the kinetics of dye regeneration we measured SECM current-distance curves of dye sensitized nickel oxide (NiO) film with blue illumination in different wavelengths
Summary
Dye-sensitized solar cells (DSSC) have got much attention due to low production cost, flexibility and transparency relative to other solar cells [1] [2] [3]. The operation principles of P-type DSSC depend on process, the sensitizer excited state dye D* injects a hole into the valence band (VB) of the semiconductor leading to the reduction of the dye D. The film thickness can significantly influence the regeneration kinetics and photovoltaic performance of dye sensitized solar cells [19] [20]. G. Wittstock group at University of Oldenburg Germany reported scanning electrochemical microscopy is a new tool to study electron transfer at dye sensitized semiconductor/electrolyte interface. Wittstock group at University of Oldenburg Germany reported scanning electrochemical microscopy is a new tool to study electron transfer at dye sensitized semiconductor/electrolyte interface They reported ZnO/Eosin Y, ruthenium (II)-sensitized TiO2, and ZnO/D149 interface regeneration kinetics [28] [29]. FTO glass (Nippon sheet glass, resistance 13 Ω/square) were coated with nickel acetate (+98%, Alfa Aesar) ethanol (≥99.7%, Merck) solution (0.05M) by dip coating and subsequently dried before screen print [30] [31]
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