Abstract
Lossless Dyakonov surface electromagnetic waves (DWs) that may be excited at the interfaces between non‐polar III‐nitride wurtzite semiconductors and optically isotropic dielectrics are considered theoretically. Because of stringent requirements on optical properties of the dielectrics suitable for DW excitation, those of them satisfying the existence conditions of surface electromagnetic waves are selected to operate in pair with AlGaN materials in a wide spectral range. DWs formed at the representative HfO2/AlN and SrTiO3/GaN interfaces are discusses in detail, including their propagation directions, angle bands of existence, and localization lengths of the surface waves near the interfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
