Abstract

AbstractSilicon (Si) photodetectors (PDs) have attracted more attention due to their wide applications, but are limited by their extremely weak ultraviolet (UV) photo‐response. Herein, Dy3+‐CsPbCl2Br1 nanocrystals glass (Dy3+‐CPCB NCsG) is synthesized in borosilicate glass by traditional melt‐quenching. The doping of Dy3+ exceedingly improves the PL intensity of CsPbCl2Br1 nanocrystals glass (CPCB NCsG) with enhancing photoluminescence quantum yield from 8.0% to 30.2%, ascribed to the improved crystallinity and reduced defects. Meanwhile, the stability of CPCB NCsG exposed to air, light, and high temperature is largely boosted. After integrating with Dy3+‐CPCB NCsG, the responsivity, external quantum efficiency, detectivity, and stability of Si PDs are significantly enhanced. The responsivity (R) of Si PDs‐5% Dy3+‐CPCB NCsG is 0.006 A W−1 at 320 nm, which is sixfold higher than that of bare Si PDs. This work develops a blue Dy3+‐CPCB NCsG, which has great potential as a new luminescent material for the next generation of Si PDs.

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