Abstract
We present experimental results on the noise of Au/Al 0.3Ga 0.7N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated by the 1 /f noise. A generation–recombination component of the noise is observed in the annealed samples. It originates from a local center present in the AlGaN layer in the vicinity of the GaN layer. It has a large capture energy barrier and disappears from the noise spectrum after illumination which suggests that it has a DX-like nature. This center may be partially responsible for the persistent photoconductivity and the collapse of the dc drain current observed in AlGaN/GaN heterostructures.
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