Abstract
Abstract Hall coefficient (RH) and electrical resistivity measurements have been performed as a function of temperature (between 77 K and 300 K) and under hydrostatic pressures (up to 15 kbar) on a set of Se-doped GaSb samples with impurity concentrations in the range 8×1017 cm−3 - 1×1018 cm−3. With increasing pressure at 300 K, the electrons are strongly trapped into a resonant impurity level. The pressure induced occupation of this level leads to time-dependent effects at T B = 300×30 meV gives clear evidence for a large lattice relaxation around the impurity centers characteristic for DX-like behavior.
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