Abstract
The Te-related DX center in Al0.3Ga0.7As0.02Sb0.98 layers of p-n junctions and avalanche photodiodes has been studied by capacitance–voltage, deep level transient spectroscopy, and direct capacitance transient measurements. A process of DX center ionization under high reverse bias conditions has been observed at temperatures where the thermal emission is negligible. The kinetics and reverse bias dependence of this process has been studied and analyzed. A mechanism of photon generation in the high-electric-field region of the devices and a subsequent photoionization of the DX center has been proposed.
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