Abstract
The influence of the dose rate on the damage creation in silicon has been investigated by means of high current density focused ion beam (FIB) implantation. 70 keV Co and Ge ions with a current density of about 1 A/cm 2 have been implanted into silicon at target temperatures in the range from room temperature to 420°C. The effective dose rate was varied between 10 13 ions/ cm 2 s and about 10 19 ions/ cm 2 s applying different pixel dwell-times from 1 μs to 250 μs. The samples have been investigated using Rutherford backscattering/channeling (RBS/C) combined with a special preparation technique, scanning electron microscopy, micro-Raman spectroscopy and reflectivity measurements. It has been found that at short dwell-times at implantation temperatures of about 400°C the silicon remains crystalline after Co as well as Ge ion bombardment also in the limit of high doses while at long dwell-times the crystal becomes amorphous. These studies of damage accumulation and dynamic annealing reveal that the characteristic time of defect annealing lies in the μs range.
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