Abstract
The switching of high-voltage (1.5 kV) 4H-SiC thyristors by the dV/dt effect has been investigated for the first time in the temperature range from 300 to 504 K. At a rise time of the forward bias V(t) equal to 30 ns, the characteristic bias at which the structure under investigation can be switched on by the dV/dt effect decreases steadily from 289 V at room temperature (dV/dt ∼ 9.7 kV µs−1) to 137 V at T = 504 K. The characteristic value of the critical charge per unit area, Qcr, is ∼1.9 × 10−7 C cm−2 at room temperature and also decreases steadily as the temperature increases.
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