Abstract
A pulsed simulation approach is demonstrated for prediction of duty-cycle dependent thermal effects in transistors. Also a novel method is shown for fitting and/or validating electro-thermal models using pulsed IV measurements and pulsed IV simulations. A commercial LDMOS device is used to demonstrate the new methods. After extracting the thermal time constant, good agreement is achieved between measured and simulated pulsed IV results under a wide range of different pulse conditions including DC, very short (<0.1%) duty cycles, and varied pulse widths between these extremes. A three-pole electro-thermal equivalent circuit model was shown to improve the model data fitting for intermediate pulse widths.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
